| Image | Series Name | Part Number | Size (mm3) | Spec.Sheet | Manual |
|---|---|---|---|---|---|
|
Epi Wafer | Green LED | 2"(50.8mm) |
Down |
- |
Product description
Feature
- Green LED Epi. Wafer
- Single side polished (Growth surface)
Structure
- p-GaN / MQWs /
- n-GaN / u-GaN / Sapphire substrate
Thickness (Included substrate)
-430㎛±15㎛
Nomalized Single Spectrum
- 300 ~ 700nm
- Specifications
-
Characteristics (at 25℃)
Parameter Typ. Test Conditions PL measurement Peak wavelength 510㎚±10㎚ Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge ExcludeUniformity STD <3% FWHM <100㎚ FWHM STD <20% Thickness Thickness 4.8㎛+/-10% Thickness STD <10% XRD (002) N/A Panalytical
HRXRD(102) N/A Hall Carrier Concentration N/A Accent
HL5500Mobility N/A Doping material Si used - Mg used Technical inquiry : joocheol@geni-uv.com / Jeong Joo-cheol / Manager