| Image | Series Name | Part Number | Size (mm3) | Spec.Sheet | Manual |
|---|---|---|---|---|---|
|
Epi Wafer | Blue LED | 2"(50.8mm) |
Down |
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Product description
Structure
- p-GaN / MQWs /
- n-GaN / u-GaN / Sapphire substrate
Thickness (Included substrate)
- 430㎛±15㎛
Nomalized Single Spectrum
-300 ~ 700nm
Feature
- Blue LED Epi. Wafer
- Single side polished (Growth surface)
- Specifications
-
Characteristics (at 25℃)
Parameter Typ. Test Conditions PL measurement Peak wavelength 450㎚±20㎚ Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge ExcludeUniformity STD <3% FWHM <40㎚ FWHM STD <20% Thickness Thickness 4.8㎛+/-10% Thickness STD <10% XRD (002) N/A Panalytical
HRXRD(102) N/A Hall Carrier Concentration N/A Accent
HL5500Mobility N/A Doping material Si used - Mg used Technical inquiry : joocheol@geni-uv.com / Jeong Joo-cheol / Manager