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U-GaN
Home > Epi Service >
U-GaN
Image
Series Name
Parts Number
Size(mm3)
Spec-sheet
Epi Wafer
Undoped GaN
2" (50.8㎜)
Feature
Undoped GaN Epi. Wafer
Single side polished (Growth surface)
Thickness (Included substrate)
430㎛±15㎛
Structure
u-GaN /
Sapphire substrate
Nomalized Single Spectrum
300 ~ 700nm
Characteristics (at 25℃)
Parameter
Typ.
Test Conditions
PL measurement
Peak wavelength
364㎚±1㎚
Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude
Uniformity STD
<3%
FWHM
<10㎚
FWHM STD
<3%
Thickness
Thickness
2㎛+/-10%
Thickness STD
<10%
XRD
(002)
<350 arcsec
Panalytical
HRXRD
(102)
<450 arcsec
Hall
Carrier Concentration
< -1×10
17
/㎝
Accent
HL5500
Mobility
>200 ㎠/V·sec
Doping material
Si
N/A
-
Mg
N/A
Technical inquiry :
jinjoo@geni-uv.com
/ Jin, Joo (Director of Research)