Genuv

Image	Series Name	Parts Number	Size(mm3)	Spec-sheet
	Epi Wafer	Undoped GaN	2" (50.8㎜)

Feature

Undoped GaN Epi. Wafer
Single side polished (Growth surface)

Thickness (Included substrate)

430㎛±15㎛

Structure

u-GaN / Sapphire substrate

Nomalized Single Spectrum

300 ~ 700nm

Characteristics (at 25℃)

Parameter		Typ.	Test Conditions
PL measurement	Peak wavelength	364㎚±1㎚	Accent RPM2000 - Laser : 266nm Nd-YG - 3mm Edge Exclude
	Uniformity STD	<3%
	FWHM	<10㎚
	FWHM STD	<3%
Thickness	Thickness	2㎛+/-10%
Thickness	Thickness STD	<10%
XRD	(002)	<350 arcsec	Panalytical HRXRD
XRD	(102)	<450 arcsec	Panalytical HRXRD
Hall	Carrier Concentration	< -1×10¹⁷ /㎝	Accent HL5500
Hall	Mobility	>200 ㎠/V·sec	Accent HL5500
Doping material	Si	N/A	-
Doping material	Mg	N/A	-

Technical inquiry : jinjoo@geni-uv.com / Jin, Joo (Director of Research)