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 Home > Epi Service > U-GaN |
| Image |
Series Name |
Parts Number |
Size(mm3) |
Spec-sheet |
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Epi Wafer |
Undoped GaN |
2" (50.8㎜) |
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| Feature |
Undoped GaN Epi. Wafer
Single side polished (Growth surface) |
| Thickness (Included substrate) |
| 430㎛±15㎛ |
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| Structure |
| u-GaN / Sapphire substrate |
| Nomalized Single Spectrum |
| 300 ~ 700nm |
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| Parameter |
Typ. |
Test Conditions |
| PL measurement |
Peak wavelength |
364㎚±1㎚ |
Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge Exclude |
| Uniformity STD |
<3% |
| FWHM |
<10㎚ |
| FWHM STD |
<3% |
| Thickness |
Thickness |
2㎛+/-10% |
| Thickness STD |
<10% |
| XRD |
(002) |
<350 arcsec |
Panalytical
HRXRD |
| (102) |
<450 arcsec |
| Hall |
Carrier Concentration |
< -1×1017 /㎝ |
Accent
HL5500 |
| Mobility |
>200 ㎠/V·sec |
| Doping material |
Si |
N/A |
- |
| Mg |
N/A |
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